Books:

  1. Title: FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard (2024)
    Authors: Y. S. Chauhan, G. Pahwa, A. Dasgupta, D. Lu, S. Venugopalan, S. Khandelwal, J. P. Duarte, N. Paydavosi, A. M. Niknejad, S. Salahuddin and C. Hu

Publications:

2024:
    Journal:
  1. A. Kumar, N. Mishra, A. Bulusu, S. Mehrotra and A. Dasgupta, "Impact of Doped Hafnium Oxides on Memory Window and Low-Frequency Noise in Ferroelectric FETs", IEEE Transactions on Electron Devices , 2024.
  2. P. Ranjan, N. Mishra, S. Kumar, A. Agarwal and A. Dasgupta, "Enhanced Optoelectronic Traits of Monolayer h-BAs for Augmented NOx (NO and NO2) Gas Sensing", IEEE Sensors Journal, 2024.
  3. A. Garg, M. Ehteshamuddin, S. Sharma, A. Dasgupta, "Investigation of Negative Differential Resistance in Metal-Edge-Contact MoS2 Field Effect Transistor", Journal of Applied Physics, vol. 135, 2024.
  4. M. Ehteshamuddin, K. Sheelvardhan, A. Kumar, S. Guglani, S. Roy and A. Dasgupta, "Machine Learning Assisted Multi-objective Optimization of Advanced Node Gate-All-Around Transistor for Logic and RF Applications", IEEE Transactions on Electron Devices, vol. 71, no. 2, 2024.
  5. S. Guglani, A. Jakhar, Km. Dimple, A. Sukhija, A. Dasgupta, R. Sharma, B. K. Kaushik, S. Roy, "Artificial Neural Networks with Fast Transfer Learning for Statistical Signal Integrity Analysis of MWCNT and MLGNR Interconnect Networks", IEEE Transactions on Electromagnetic Compatibility, 2024.
  6. N. Mishra, P. Ranjan, A. Dasgupta, B. P. Pandey, S. Kumar and S. Roy, "Theoretical Insights of the Photocatalytic and Hydrogen Storage Ability of Two-dimensional (2D) MoSe2 (MX2) and MoSSe (MXY) (X=Se,Y=S) ML using DFT Study", IEEE Sensors Journal, vol. 24, no. 1, 2024.
  7. C. T. Tung, A. Dasgupta, H. Agarwal, S. Salahuddin and C. Hu, "A Compact Model of Perpendicular Spin-Transfer-Torque Magnetic Tunnel Junction", IEEE Transactions on Electron Devices, vol. 71, no. 1, 2024.
  8. A. Kumar, M. Ehteshamuddin, A. Gaidhane, A. Bulusu, S. Mehrotra and A. Dasgupta, "Universal Compact Model of Flicker Noise in Ferroelectric Logic and Memory Transistors", IEEE Transactions on Electron Devices, vol. 71, no. 1, 2024.
  9. K. Sheelvardhan, S. Guglani, M. Ehteshamuddin, S. Roy and A. Dasgupta, "Machine Learning Augmented Compact Modeling for Simultaneous Improvement in Computational Speed and Accuracy", IEEE Transactions on Electron Devices, vol. 71, no. 1, 2023.
  10. Conference:
  11. A. Singh, S. Parandiyal, K. Sheelvardhan, M. Ehteshamuddin, S. Ray, A. Somani, S. Roy and A. Dasgupta, "Using Control Variates for Improved Efficiency of Neural Network based Modeling of Advanced Transistors", TECHCON, Austin, TX, USA, September, 2024.
  12. N. Mishra, P. Ranjan, A. Dasgupta and S. Roy, "Optical behavior of pristine and intercalated-(Mn) bilayer MoSSe for optical storage applications", Graphene 2024, Spain, June, 2024.   Graphene
  13. A. Kumar and A. Dasgupta, "Compact Modeling of Compound Semiconductor Memory ULTRARAM: A Universal Memory Device", Device Research Conference (DRC), Maryland, USA, June 2024.   DRC
  14. A. K. Jakhar, D. Basu, Km. Dimple, S. Guglani, A. Dasgupta, S. Roy, "A Fast Metalearning Algorithm for Neural Network Enabled Uncertainty Quantification of Graphene Based Interconnects with Passive Shielding", IEEE International Symposium on Electromagnetic Compatibility, Signal and Power Integrity (EMC), Pheonix, AZ, USA, Aug. 2024.
  15. A. Kumar, M. Ehteshamuddin, A. Bulusu, S. Mehrotra and A. Dasgupta, "A Physics-based Compact Model for ULTRARAM Memory Device", IEEE Electron Devices Technology and Manufacturing (EDTM), Bengaluru, Mar. 2024.   EDTM
  16. A. Kumar, A. Bulusu and A. Dasgupta, "Performance Projection of Negative Capacitance Complementary FET (NC-CFET): Device-Circuit Co-design", IEEE Electron Devices Technology and Manufacturing (EDTM), Bengaluru, Mar. 2024.   EDTM
  17. M. Shukla, S. K. Dey, S. K. Manivannan and A. Dasgupta, "Projection of Circuit Performance at Cryogenic Temperatures including Self-Heating: A Device-Circuit Co-design Perspective", IEEE Electron Devices Technology and Manufacturing (EDTM), Bengaluru, Mar. 2024.   EDTM
  18. S. Sarker, A. Garg, P. Ranjan, A. Kumar and A. Dasgupta, "Physics-Based Core Compact Model of 2D MoS2 FET Considering Fermi-Dirac Statistics", IEEE Electron Devices Technology and Manufacturing (EDTM), Bengaluru, Mar. 2024.   EDTM
  19. N. Mishra, P. Ranjan, A. Dasgupta and S. Roy, "Impact of Electric Field on the Perpendicular Magnetic Anisotropy of CrMnS2I2 Monolayer- A DFT Perspective", IEEE Electron Devices Technology and Manufacturing (EDTM), Bengaluru, Mar. 2024.   EDTM
  20. P. Ranjan, N. Mishra, S. Roy, A. Agarwal and A. Dasgupta, "Photocatalytic and Optical Properties of TiO2/MoSSe Monolayer for Enhanced IR absorption", IEEE Electron Devices Technology and Manufacturing (EDTM), Bengaluru, Mar. 2024.   EDTM
  21. K. Sheelvardhan, S. Parandiyal, M. Ehteshamuddin, A. Kumar, S. Roy and A. Dasgupta, "Neural Network augmented Physics based Hybrid Compact Model for Computational Efficiency Improvement", IEEE Electron Devices Technology and Manufacturing (EDTM), Bengaluru, Mar. 2024.   EDTM
2023:
    Journal:
  1. S. Kushwaha, A. Dasgupta, S. Roy and R. Sharma, "Fast Multi-ANN Composite Models for Repeater Optimization in Presence of Parametric Uncertainty for On-Chip Hybrid Copper-Graphene Interconnects", IEEE Access, vol. 11, 2023.
  2. S. Sarker, A. Kumar, M. Ehteshamuddin and A. Dasgupta, "Compact Modeling of Parasitic Capacitances in GAAFETs for Advanced Technology Nodes", IEEE Journal of Electron Devices Society, vol. 11, 2023.
  3. A. Ashai, A. Jadhav, A. K. Behra, S. Roy, A. Dasgupta and B. Sarkar, "Deep Learning Based Fast BSIM-CMG Parameter Extraction for General Input Dataset", IEEE Transactions on Electron Devices, vol. 70, no. 7, 2023.
  4. Km Dimple, S. Guglani, A. Dasgupta, R. Sharma, S. Roy and B. K. Kaushik, "Modified Knowledge Based Neural Networks Using Control Variates for the Fast Uncertainty Quantification of On-Chip MWCNT Interconnects", IEEE Transactions on Electromagnetic Compatibility, 2023.
  5. Conference:
  6. Km. Dimple, M. Ehteshamuddin, S. Guglani, A. Dasgupta and S. Roy, "Optimization of Eye Diagram Characteristics of MLGNR Interconnect Networks Using Fast ML Assisted Evolutionary Algorithm", IEEE Electrical Design of Advanced Packaging and Systems, Mauritius, Dec. 2023.
  7. A. K. Jakhar, S. Guglani, A. Dasgupta, and S. Roy, "Noise-Aware Uncertainty Quantification of MLGNR Interconnects using Fast Trained Artifical Neural Networks", IEEE Electrical Design of Advanced Packaging and Systems, Mauritius, Dec. 2023.
  8. S. Sarker, S. Roy, and A.Dasgupta, "Prior Knowledge Input Difference-based Compact Model for Predicting the Subband Energy in GAAFETs", International Workshop on Physics of Semiconductor Devices (IWPSD), Chennai, Dec. 2023.
  9. M. Shukla,M. Ehteshamuddin, A. Kumar, K. Sheelvardhan and A. Dasgupta, "Novel Charge Partitioning Compact Model including Field-Dependent Mobility Degradation Effect for nanoscale MOSFETs", International Workshop on Physics of Semiconductor Devices (IWPSD), Chennai, Dec. 2023.
  10. A. Kumar, A. Bulusu, S. Mehrotra, and A. Dasgupta, "A Landau Based Compact Model for Multi Domain Ferroelectric Field Effect Transistors", International Workshop on Physics of Semiconductor Devices (IWPSD), Chennai, Dec. 2023.
  11. K. Sheelvardhan, M. Ehteshamuddin, S. Roy, and A. Dasgupta, "Machine Learning Augmented Hybrid BSIM-CMG Compact Model for Increased Simulation Speed", International Workshop on Physics of Semiconductor Devices (IWPSD), Chennai, Dec. 2023.
  12. M. Ehteshamudin, A. Kumar, S. Roy and A. Dasgupta, "Optimizing Memory Window and Polarization of a Fe-CAP Using Machine Leaning Assisted Genetic Algorithm Framework", International Workshop on Physics of Semiconductor Devices (IWPSD), Chennai, Dec. 2023.
  13. A. Srivastava, N. Mishra, P. Ranjan, and A. Dasgupta, "Analysis of the Best Metal Contacts for 2-dimensional MoS2 Based Advanced Devices for Future Technology Nodes", International Workshop on Physics of Semiconductor Devices (IWPSD), Chennai, Dec. 2023.
  14. N. Mishra, P. Ranjan, S. Roy and A. Dasgupta, "Study of Spin Induced Ferromagnetism in Transition Metal (Mo) doped and Mn-Adsorbed CrI3 Monolayer", International Workshop on Physics of Semiconductor Devices (IWPSD), Chennai, Dec. 2023.
  15. N. Mishra, P. Ranjan, S. Roy and A. Dasgupta, "Photocatalytic and Optical Properties of TiO2/MoSSe Monolayer for Enhanced IR absorption", International Workshop on Physics of Semiconductor Devices (IWPSD), Chennai, Dec. 2023.
  16. A. K. Jakhar, S. Guglani, A. Dasgupta, S. Roy, "Prior Knowledge Accelerated Transfer Learning (PKI-TL) for Machine Learning Assisted Uncertainty Quantification of MLGNR Interconnect Networks", IEEE Electrical Performance Electronic Packaging Systems (EPEPS), Milpitas, CA, USA, Oct. 2023.(Invited)  EPEPS
  17. M. Yusuf, S. Singh, B. Sarkar, A. Dasgupta and S. Roy, "A Deep Learning Space Mapping based Enhancement of Compact Models for Accurate Prediction of Trapping in GaN HEMTs from DC to mm-Wave Frequency", International Microwave Symposium (IMS), San Diego, CA, 2023.  IMS
  18. K. Sheelvardhan, S. Guglani, M. Ehteshamuddin, S. Roy and A. Dasgupta, "Variability Aware FET Model with Physics Knowledge Based Machine Learning", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar. 2023.   EDTM
  19. S. Banchhor, N. Bagga, N. Chauhan, S. Manikandan, A. Dasgupta, S. Dasgupta and A. Bulusu, "A New Insight into the Saturation Phenomenon in Nanosheet Transistor: A Device Optimization Perspective", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Seoul, Korea, Mar. 2023.  EDTM
2022:
    Journal:
  1. A. Pon, M. Ehteshamuddin, K. Sheelvardhan and A. Dasgupta, "Analysis of 1/f and G-R Noise in Phosphorene FETs", Solid State Electronics, vol. 200 (108530), 2022.
  2. N. Mishra, B. Pandey, V. Tomar, A. Dasgupta, S. Kumar, "Investigating the Infrared (IR) Absorption and Optoelectronic Properties of Mn-doped MoSe2 ML by Adsorption of NOx Gas Molecules", IEEE Sensors Journal, vol. 22, no. 23, 2022.
  3. Conference:
  4. M. Subramaniyan, N. Chauhan, N. Bagga, A. Kumar, S. K. Banchhor, S. Roy, A. Dasgupta, A. Bulusu and S. Dasgupta, "Analysis and Modeling of Leakage Currents in Stacked Gate-All-Around Nanosheet Transistors", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
  5. A. Kumar, G. Pahwa, A. K. Behera, A. Bulusu, S. Mehrotra and A. Dasgupta, "Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
  6. S. Parandiyal, A. Singh, K. Sheelvardhan, S. Guglani, M. Ehteshamuddin, S. Roy and A. Dasgupta, "An Efficient Variability-Aware Control Variate-Assisted Neural Network Model for Advanced Nanoscale Transistors", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, Dec. 2022.
  7. G. Pahwa, A. Dasgupta, C. T. Tung, M.Y. Kao, C. K. Dabhi, S. Sarker, S. Salahuddin and C. Hu, "Compact Modeling of Emerging IC Devices for Technology-Design Co-development", IEEE International Electron Devices Meeting (IEDM), San Francisco, 2022. (Invited)  IEDM
  8. S. Guglani, Km Dimple, A. Dasgupta, R. Sharma, B. K. Kaushik and S. Roy, "A Transfer Learning Approach to Expedite Training of Artificial Neural Networks for Variability-Aware Signal Integrity Analysis of MWCNT Interconnects ", IEEE Electrical Performance Electronic Packaging Systems Conference (EPEPS), San Jose, CA, USA, Oct. 2022.  EPEPS
  9. A. Pon, M. Ehteshamuddin, K. Sheelvardhan and A. Dasgupta, "Analysis of 1/f and G-R Noise in Phosphorene FETs", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Granada, Spain, Sep. 2022.
  10. S. Guglani, J. Patel, A. Dasgupta, M.-Y. Kao, C. Hu, S. Roy, "Artificial Neural Network Surrogate Models for Efficient Design Space Exploration of 14-nm FinFETs", Device Research Conference (DRC), Ohio, USA, June 2022.  DRC
  11. A. Kar, S. Sarker, A. Dasgupta, and Y. S. Chauhan, "Impact of Corner Rounding on Quantum Confinement in GAA Nanosheet FETs for Advanced Technology Nodes", Device Research Conference (DRC), Ohio, USA, June 2022.  DRC
  12. N. Chauhan, C. Garg, K. Ni, A. K. Behera, S. Yadav, S. K. Banchhor, N. Bagga, A. Dasgupta, A. Dutta, S. Dasgupta, A. Bulusu, "Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on Multidomain MFIM Capacitor and Negative Capacitance FDSOI", IEEE International Reliability Physics Symposium (IRPS), Dallas, Tx, USA, Mar. 2022.  IRPS
  13. J. Patel, S. Banchor, S. Guglani, A. Dasgupta, S. Roy, A. Bulusu and S. Dasgupta, "Design Optimization Using Symmetric/Asymmetric Spacer for 14 nm Multi-FinFET for Mid-Band 5G Application", International Conference on VLSI Design, Feb. 2022.
2021:
    Journal:
  1. G. Pahwa, P. Kushwaha, A. Dasgupta, S. Salahuddin and C. Hu, "Compact Modeling of Temperature Effects in Modern MOSFETs down to Cryogenic Temperatures", IEEE Transactions on Electron Devices, vol. 68, no. 9, 2021.
  2. M.-Y. Kao, Y.-H. Liao, G. Pahwa, A. Dasgupta, S. Salahuddin and C. Hu, "Energy Storage and Reuse in Negative Capacitance", IEEE Transactions on Electron Devices, vol. 68, no. 4, 2021.
  3. Conference:
  4. A. Dasgupta, "BSIM-CMG: Compact Model for Gate-All-Around FETs", International Workshop on Physics of Semiconductor Devices (IWPSD), Dec. 2021. (Invited)
  5. R. Kumar, S. Sarker, S. Dasgupta, A. Dasgupta, S. Roy, "Fast extraction of quantum confinement effect on threshold voltage of Gate-All-Around FETs using machine learning methods", International Workshop on Physics of Semiconductor Devices (IWPSD), Dec. 2021.
  6. S. Banchhor, N. Bagga, N. Chauhan, S. Manikandan, A. Dasgupta, S. Dasgupta, A. Bulusu, "Analysis of Self-Heating in 5nm Stacked Nanosheet Transistor", International Workshop on Physics of Semiconductor Devices (IWPSD), Dec. 2021.
  7. A. Dasgupta, "Compact Modeling for Gate-All-Around FET Technology", MOS-AK (Asia Pacific) Workshop, 2021. (Invited)
2020:
    Journal:
  1. A. Dasgupta and C. Hu, "Gate-All-Around FET Design Rule for Suppression of Excess Non-linearity ", IEEE Electron Device Letters, vol. 41, no. 12, 2020. (Editor's pick and Cover mention)
  2. A. Dasgupta and C. Hu, "BSIM-CMG compact model for IC CAD: from FinFET to Gate-All-Around FET Technology", Journal of Microelectronic Manufacturing, vol. 3, 2020. (Invited)
  3. P. Kushwaha, A. Dasgupta, M.-Y. Kao, H. Agarwal, S. Salahuddin, C. Hu, "Design Optimization Techniques in Nanosheet Transistor for RF Applications", IEEE Transactions on Electron Devices, vol. 67, no. 10, 2020.
  4. A. D. Gaidhane, G. Pahwa, A. Dasgupta, A. Verma, and Y. S. Chauhan, "Compact Modeling of Surface Potential, Drain Current and Terminal Charges in Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport", IEEE Journal of Electron Devices Society, vol. 8, 2020.
  5. M.-Y. Kao, G. Pahwa, A. Dasgupta, S. Salahuddin, C. Hu, "Analysis and Modeling of Polarization Gradient Effect on Negative Capacitance FET", IEEE Transactions on Electron Devices, vol. 67, no. 10, 2020.
  6. M.-Y. Kao, H. Agarwal, Y.-H. Liao, S. Cheema, A. Dasgupta, P. Kushwaha, A. Tan, S. Salahuddin, C. Hu, "Negative Capacitance Enables FinFET Scaling Beyond 3nm Node", arXiv:2007.14448 [physics.app-ph], 2020.
  7. C. K. Dabhi, S. S. Parihar, A. Dasgupta, and Y. S. Chauhan, "Compact Model of Negative-Capacitance FDSOI FETs for Circuit Simulations", IEEE Transactions on Electron Devices, vol. 67, no. 7, 2020.
  8. A. Dasgupta, S. S. Parihar, H. Agarwal, P. Kushwaha, Y. S. Chauhan and C. Hu, "Compact Model for Geometry Dependent Mobility in Nanosheet FETs", IEEE Electron Device Letters, vol. 41, no. 3, 2020.
  9. A. Dasgupta, S. S. Parihar, P. Kushwaha, H. Agarwal, M.-Y. Kao, S. Salahuddin, Y. S. Chauhan and C. Hu, "BSIM Compact Model for Quantum Confinement in Advanced Nanosheet FETs", IEEE Transactions on Electron Devices, vol. 67, no. 2, 2020.
  10. Conference:
  11. A. D. Gaidhane, G. Pahwa, A. Dasgupta, A. Verma and Y. S. Chauhan, "Compact Modeling of Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar. 2020.  EDTM
  12. H. Agarwal, P. Kushwaha, A. Dasgupta, M.-Y. Kao, T. Morshed, G. Workman, K. Shanbhag, X. Li, Y. S. Chauhan, S. Salahuddin and C. Hu,, "BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia, Mar. 2020.  EDTM
2019:
    Journal:
  1. Y.-K. Lin, H. Agarwal, M.-Y. Kao, Z. Zhou, Y. H. Liao, A. Dasgupta, P. Kushwaha, S. Salahuddin, and C. Hu, "Spacer Engineering in Negative Capacitance FinFETs", IEEE Electron Device Letters, vol. 40, no. 6, 2019.
  2. P. Kushwaha, H. Agarwal, A. Dasgupta, M.-Y. Kao, Y. Lu, Y. Yue, X. Chen, J. Wang, W. Sy, F. Yang, PR. C. Chidambaram, S. Salahuddin, and C. Hu, "Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology node", IEEE Electron Device Letters, vol. 40, no. 6, 2019.
  3. M.-Y. Kao, Y.-K. Lin, H. Agarwal, Y.-H. Liao, P. Kushwaha, A. Dasgupta, S. Salahuddin, and C. Hu, "Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly along the Channel", IEEE Electron Device Letters, vol. 40, no. 5, 2019.
  4. H. Agarwal, P. Kushwaha, Y.-K. Lin, M.-Y. Kao, Y.-H. Liao, A. Dasgupta, S. Salahuddin, and C. Hu, "Proposal for Capacitance Matching in Negative Capacitance Field Effect Transistors", IEEE Electron Device Letters, vol. 40, no. 3, 2019. (EDL cover page)
  5. A. Dasgupta, A. Verma, and Y. S. Chauhan, "Analysis and Compact Modeling of Insulator-Metal-Transition Material based PhaseFET Including Hysteresis and Multi-domain Switching", IEEE Transactions on Electron Devices, vol. 66, no. 1, 2019.
  6. Conference:
  7. P. Kushwaha, H. Agarwal, A. Dasgupta, Y. K. Lin, M-Y. Kao, Y. S. Chauhan, S. Salahuddin and C. Hu, "Modeling the Quantum Gate capacitance of Nano-Sheet Gate-All-Around MOSFET", IEEE SOI–3D–Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, USA, 2019.
2018:
    Journal:
  1. C. K. Dabhi, A. Dasgupta, P. Kushwaha, H. Agarwal, C. Hu, and Y. S. Chauhan, "Modeling of Induced Gate Thermal Noise including Back Bias Effect in FD-SOI MOSFET", IEEE Microwave and Wireless Components Letters, vol. 28, no. 7, 2018.
  2. A. Dasgupta, P. Rastogi, A. Agarwal, C. Hu, and Y. S. Chauhan, "Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D Transition", IEEE Transactions on Electron Devices, vol. 65, no. 3, 2018.
  3. Conference:
  4. A. Dasgupta, P. Rastogi, D. Saha, A. Gaidhane, A. Agarwal and Y. S. Chauhan, "Modeling of Multi-domain Switching in Ferroelectric Materials: Application to Negative Capacitance FETs", IEEE International Electron Devices Meeting (IEDM), San Francisco, 2018.  IEDM
  5. D. K. Singh, A. Dasgupta, A. Agarwal and Y. S. Chauhan, "Incident Flux based Monte Carlo simulation of Silicon and GaAs FETs in Quasi-ballistic regime", IEEE International Conference on Emerging Electronics (ICEE), Bengaluru, India, 2018.
  6. P. Rastogi, A. Dasgupta, and Y. S. Chauhan, "Diameter Scaling in III-V Gate-All-Around Transistor for Different Cross-Sections", IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT), Bengaluru, India, 2018. (Best Paper Award)
  7. Y. S. Chauhan, C. Yadav, A. Dasgupta, and P. Rastogi, "Atomistic Simulation and Compact Modeling of Atomically Thin Transistors", IEEE International Conference on Electronics and Computer Engineering (ICECE), Dhaka, Bangladesh, 2018. (Invited)
  8. Thesis:
  9. A. Dasgupta, "Compact Modeling of Electrostatics, Quasi-ballistic Transport and Noise in MOSFETs and Magnetic Tunnel Junctions", Ph.D. Thesis, Feb. 2018.
2017:
    Journal:
  1. Y. Sahu, P. Kushwaha, A. Dasgupta, C. Hu, and Y. S. Chauhan, "Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect", IEEE Transactions on Microwave Theory and Techniques, vol. 65, no. 7, 2017.
  2. A. Dasgupta, A. Agarwal, and, Y. S. Chauhan, "An Improved Model for Quasi-Ballistic Transport in MOSFETs", IEEE Transactions on Electron Devices, vol. 64, no. 7, 2017.
  3. A. Dasgupta, A. Agarwal, and, Y. S. Chauhan, "Unified Compact Model for Nanowire Transistors including Quantum Effects and Quasi-ballistic Transport", IEEE Transactions on Electron Devices, vol. 64, no. 4, 2017.
  4. Conference:
  5. D. Datta, H. Dixit, S. Agarwal, A. Dasgupta, M. Tran, D. Houssameddine, Y. S. Chauhan, D. Shum, and F. Benistant, "Quantitative Model for Switching Asymmetry in Perpendicular MTJ: A Material-Device-Circuit Co-Design", IEEE International Electron Devices Meeting (IEDM), San Francisco, Dec. 2017.   IEDM
  6. A. Dasgupta and Y. S. Chauhan, "Modeling of Flicker Noise in Quasi-ballistic FETs", IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, Sep. 2017.
  7. A. Dasgupta, C. Gupta, A. Dutta, Y.-K. Lin, S. Srihari, T. Ethirajan, C. Hu, and Y. S. Chauhan, "Modeling of Body-bias Dependence of Overlap Capacitances in Bulk MOSFETs", IEEE International Conference on VLSI Design, Hyderabad, India, Jan. 2017.
2016:
    Journal:
  1. A. Dasgupta, A. Agarwal, Sourabh Khandelwal and, Y. S. Chauhan, "Compact Modeling of Surface Potential, Charge and Current in Nanoscale Transistors under Quasi-Ballistic Regime", IEEE Transactions on Electron Devices, vol. 63, no. 11, 2016.
  2. P. Kushwaha, A. Dasgupta, Y. Sahu, S. Khandelwal, C. Hu, and Y. S. Chauhan, "Characterization of RF Noise in UTBB FD-SOI MOSFET", IEEE Journal of the Electron Devices Society, vol. 4, no. 6, 2016.
  3. A. Dasgupta and Y. S. Chauhan, "Modeling of Induced Gate Thermal Noise in HEMTs", IEEE Microwave and Wireless Components Letters, vol. 26, no. 6, June 2016.
  4. S. A. Ahsan, S. Ghosh, A. Dasgupta, K. Sharma, S. Khandelwal, and Y. S. Chauhan, "Capacitance Modeling in Dual Field Plate Power GaN HEMT for Accurate Switching Behaviour", IEEE Transactions on Electron Devices, vol. 63, no. 2, 2016.
  5. Conference:
  6. S. Ghosh, S. A. Ahsan, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "GaN HEMT Modeling for Power and RF Applications using ASM-HEMT", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
  7. D. K. Singh, A. Dasgupta, and Y. S. Chauhan, "Accurate Modeling of Centroid Shift in III-V FETs including Non-linear Potential Profile and Wave-function Penetration", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
  8. S. Ghosh, A. Dasgupta, A. K. Dutta, S. Khandelwal, and Y. S. Chauhan, "Physics based Modeling of Gate Current including Fowler-Nordheim Tunneling in GaN HEMT", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
  9. A. Dasgupta, H. Agarwal, A. Agarwal, and Y. S. Chauhan, "Modeling of Flicker Noise in Quasi-ballistic devices", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
  10. C. K. Dabhi, A. Dasgupta, and Y. S. Chauhan, "Computationally efficient Analytical Surface Potential model for UTBB FD-SOI Transistors", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
  11. C. K. Dabhi, P. Kushwaha, A. Dasgupta, H. Agarwal, and Y. S. Chauhan, "Impact of Back Plane Doping on RF Performance of FD-SOI Transistor using Industry Standard BSIM-IMG Model", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016.
  12. A. Dasgupta, S. Ghosh, S. A. Ahsan, S. Khandelwal, N. Defrance, and Y. S. Chauhan, "Modeling DC, RF and Noise behavior of GaN HEMTs using ASM-HEMT Compact Model", IEEE International Microwave and RF Conference (IMaRC), Delhi, India, Dec. 2016.
  13. S. A. Ahsan, S. Ghosh, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "ASM-HEMT: Advanced SPICE Model for Gallium Nitride High Electron Mobility Transistors", International Conference of Young Researchers on Advanced Materials (ICYRAM), Bangalore, India, Dec. 2016.
2015:
    Journal:
  1. A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "Surface potential based Modeling of Thermal Noise for HEMT circuit simulation", IEEE Microwave and Wireless Components Letters, vol. 25, no. 6, 2015.
  2. S. Ghosh, A. Dasgupta, S. Khandelwal, S. Agnihotri, and Y. S. Chauhan, "Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs", IEEE Transactions on Electron Devices, vol. 62, no. 2, 015.
  3. Conference:
  4. S. Agnihotri, S. Ghosh, A. Dasgupta, A. Ahsan, S. Khandewal, and Y. S. Chauhan, "Modeling of Trapping Effects in GaN HEMTs", IEEE India Conference (INDICON), New Delhi, India, Dec. 2015.
  5. A. Dasgupta, A. Agarwal, and Y. S. Chauhan, "Compact Model for charge centroid in III-V FETs", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
  6. K. Sharma, S. Ghosh, A. Dasgupta, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Capacitance Analysis of Field Plated GaN HEMT", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
  7. A. Dasgupta, A. Agarwal, and Y. S. Chauhan, "Compact Modeling of Quasi-Ballistic transport in FETs", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015.
  8. J. P. Duarte, S. Khandelwal, A. Medury, C. Hu, P. Kushwaha, H. Agarwal, A. Dasgupta, and Y. S. Chauhan "BSIM-CMG: Standard FinFET Compact Model for Advanced Circuit Design", IEEE European Solid-State Circuit Conference (ESSCIRC), Graz, Austria, Sept. 2015. (Invited)  ESSCIRC
  9. S. A. Ahsan, S. Ghosh, K. Sharma, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "Capacitance Modeling of a GaN HEMT with Gate and Source Field Plates", IEEE International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, June 2015.
  10. A. Dasgupta and Y. S. Chauhan, "Surface Potential Based Modeling of Induced Gate Thermal Noise for HEMTs", IEEE International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, June 2015.
  11. A. Dasgupta, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "ASM-HEMT: Compact model for GaN HEMTs", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Singapore, June 2015.
  12. K. Sharma, A. Dasgupta, S. Ghosh, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Effect of Access Region and Field Plate on Capacitance behavior of GaN HEMT", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Singapore, June 2015.
2014:
    Journal:
  1. A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "Compact Modeling of Flicker Noise in HEMTs", IEEE Journal of the Electron Devices Society, vol. 2, no. 6, 2014.
  2. Conference:
  3. A. Dasgupta, C. Yadav, P. Rastogi, A. Agarwal, and Y. S. Chauhan, "Analysis and Modeling of Quantum Capacitance in III-V Transistors", IEEE International Conference on Emerging Electronics (ICEE), Bangalore, India, Dec. 2014. (Best Poster Award)
  4. S. Khandelwal, T. A. Fjeldly, Y. S. Chauhan, B. Iniguez, S. Ghosh, A. Dasgupta, K. Sharma, "ASM-HEMT Model: A Physics-based Compact Model for GaN HEMTs", MOS-AK Workshop, Berkeley, USA, Dec. 2014.
  5. Thesis:
  6. A. Dasgupta, "Noise modeling in High Electron Mobility Transistors", M.Tech Thesis, May. 2014.
2013:
  1. S. Agnihotri, S. Ghosh, A. Dasgupta, S. Khandewal, and Y. S. Chauhan, "A Surface Potential based Model for GaN HEMTs", IEEE PrimeAsia, Visakhapatnam, Dec. 2013. (Gold Leaf Certificate)
 
 
 

Invited presentations/talks:

  1. A. Dasgupta, “Machine Learning Augmented Device Modeling”, Short course on Neuroevolution-based Advanced Semiconductor Devices, BITS Mesra, India, 2024.
  2. A. Dasgupta, “Advances in Computational Nanoelectronics”, STTP on Nano-Scale Devices: Recent Advancement and Future of Semiconductor Industry, NIT Kurukshetra, India, 2024.
  3. A. Dasgupta, “Advanced Device Modeling and EDA”, Jadavpur University, Kolkata, India, 2024.
  4. A. Dasgupta, “Advances in Semiconductor Technology and Electronic Design Automation”, National Science Day, Calcutta University, Kolkata, India, 2024.
  5. A. Dasgupta, “Ideas for Young professionals”, EDTM 2024 Young professionals meet, Bengaluru, India, 2024.
  6. A. Dasgupta, “Advances in Machine learning for Electronic Device Automation”, FDP on Advanced in Semiconductor Devices, IIITDM, Jabalpur, India, 2024.
  7. A. Dasgupta, "Machine learning for Electronic Device Automation", Short course on Emerging Semiconductor Material, Device Technology, and Manufacturing, NIT Rourkela, India, 2023.
  8. S. Roy and A. Dasgupta, "Metalearning Advances in Machine Learning for Modeling of Emerging FET Devices and Interconnects Below 10nm Technology Nodes", IEEE Electrical Performance Electronic Packacging Systems (EPEPS), Milpitas, CA, USA, 2023.
  9. A. Dasgupta, "BDMC STT-MRAM compact model", BDMC Summer webinar, Sep. 2023.
  10. A. Dasgupta, "Machine Learningfor Semiconductor Devices", IEEE EDS Workshop on Devices and Circuits (WDC), Khajuraho, India, Jan. 2023.
  11. A. Dasgupta, "BSIM: A family of Industry Standard Compact Models for Modern FETs", IEEE Internationcal Conference on Emerging Electronics (ICEE), Bengaluru, India, 2022.
  12. A. Dasgupta, "Machine Learning for Semiconductor Devices", Research Opportunities in Semiconductor Materials and Devices (ROSMD), Oct. 2022
  13. A. Dasgupta, "Recent Developments in Compact Models for Multi-Gate FETs", IEEE EDS Workshop on Devices and Circuits (WDC), Goa, Mar. 2022.
  14. A. Dasgupta, "Recent developments in compact models for modern and future technologies", Chandigarh University, Mar. 2022.
  15. A. Dasgupta, "BSIM compact models for present and future Multi-Gate FETs", Micron Technology, Inc., Mar. 2022.
  16. A. Dasgupta, "BSIM-CMG: Compact Model for Gate-All-Around FETs", International Workshop on Physics of Semiconductor Devices (IWPSD), IIT Delhi, Dec. 2021.
  17. A. Dasgupta, "Semiconductor devices: Recent advances and open problems", IEEE EDS Technical Talk, MSIT Kolkata, Oct. 2021.
  18. A. Dasgupta, "Design Considerations and Compact Modeling of GAAFETs for Upcoming Technology Nodes", Short Term Course on "Frontier Areas of Electronics and Communication Engineering: An Industry-Academia Convergence, NIT-UK, Sep. 2021.
  19. A. Dasgupta, "Compact Modeling for Gate-All-Around FET Technology", MOS-AK (Asia Pacific) Workshop, Feb. 2021.
  20. A. Dasgupta, "Design and Modeling of Nanosheet FETs", IITK Short Course, Feb. 2021.
  21. A. Dasgupta, "Design Considerations and Compact Modeling of GAAFETs for Upcoming Technology Nodes", AICTE Workshop, NIT Meghalaya, Feb. 2021.(Keynote)
  22. A. Dasgupta, "Compact Modeling of STT-MRAMs", BDMC webinar, Oct. 2020.
  23. A. Dasgupta, "Compact modeling of Nanosheet FETs", BDMC webinar, Sept. 2019.

Organized talks:

  1. Multiple talks as a part of IEEE EDS MLED'23.
  2. Multiple talks as a part of IEEE EDS MLED'22.
  3. G. Pahwa, "Cryogenic MOS Physics and Compact Modeling", IEEE EDS Technical Talk, IIT Roorkee, Jan. 2022.